1 MRF9045M MRF9045Mr1 motorola rf device data the rf submicron mosfet line
nchannel enhancementmode lateral mosfet designed for broadband commercial and industrial applications at frequen- cies up to 1.0 ghz. the high gain and broadband performance of this device make it ideal for largesignal, commonsource amplifier applications in 28 volt base station equipment. ? typical performance at 945 mhz, 28 volts output power 45 watts pep power gain 18.5 db efficiency 41% (two tones) imd 31 dbc ? integrated esd protection ? guaranteed ruggedness @ load vswr = 5:1, @ 28 vdc, 945 mhz, 45 watts (cw) output power ? excellent thermal stability ? characterized with series equivalent largesignal impedance parameters ? moisture sensitivity level 3 ? rf power plastic surface mount package ? available in tape and reel. r1 suffix = 500 units per 24 mm, 13 inch reel. maximum ratings rating symbol value unit drainsource voltage v dss 65 vdc gatesource voltage v gs + 15, 0.5 vdc total device dissipation @ t c = 25 c derate above 25 c p d 156 (1) 1.25 (1) watts w/ c storage temperature range t stg 65 to +150 c operating junction temperature t j 150 c esd protection characteristics test conditions class human body model 1 (typical) machine model m2 (typical) thermal characteristics characteristic symbol max unit thermal resistance, junction to case r q jc 0.8 (1) c/w (1) simulated note caution mos devices are susceptible to damage from electrostatic charge. reasonable precautions in handling and packaging mos devices should be observed. order this document by MRF9045M/d
semiconductor technical data 945 mhz, 45 w, 28 v lateral nchannel broadband rf power mosfet case 126506, style 1 (to270) plastic ? motorola, inc. 2000 rev 0
MRF9045M MRF9045Mr1 2 motorola rf device data electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0) i dss e e 10 m adc zero gate voltage drain leakage current (v ds = 28 vdc, v gs = 0) i dss e e 1 m adc gatesource leakage current (v gs = 5 vdc, v ds = 0 ) i gss e e 1 m adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 150 m adc) v gs(th) 2 e 4 vdc gate quiescent voltage (v ds = 28 vdc, i d = 350 madc) v gs(q) e 3.7 e vdc drainsource onvoltage (v gs = 10 vdc, i d = 1 adc) v ds(on) e 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 3 adc) g fs e 4 e s dynamic characteristics input capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c iss e 74 e pf output capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c oss e 39 e pf reverse transfer capacitance (v ds = 28 vdc, v gs = 0, f = 1 mhz) c rss e 1.9 e pf (continued)
3 MRF9045M MRF9045Mr1 motorola rf device data electrical characteristics e continued (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit functional tests (in motorola test fixture) twotone commonsource amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) g ps 17 18.5 e db twotone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) h 38 41 e % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) imd e 31 28 dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 945.0 mhz, f2 = 945.1 mhz) irl 9 15 e db twotone commonsource amplifier power gain (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) g ps e 18.5 e db twotone drain efficiency (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) h e 41 e % 3rd order intermodulation distortion (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) imd e 31 e dbc input return loss (v dd = 28 vdc, p out = 45 w pep, i dq = 350 ma, f1 = 930.0 mhz, f2 = 930.1 mhz and f1 = 960.0 mhz, f2 = 960.1 mhz) irl e 13 e db
MRF9045M MRF9045Mr1 4 motorola rf device data figure 1. 945 mhz broadband test circuit schematic z3 0.14 x 0.32 z4 0.47 x 0.32 z5 0.16 x 0.32 x 0.62 tapered z6 0.18 x 0.62 z7 0.56 x 0.62 z8 0.33 x 0.32 z9 0.14 x 0.32 z10 0.36 x 0.08 z11 1.01 x 0.08 z12 0.15 x 0.08 z13 0.29 x 0.08 b1, b2 short ferrite beads, surface mount c1, c7, c13, c14 47 pf, chip capacitors, b case c2, c8 2.7 pf, chip capacitors, b case c3 3.9 pf, chip capacitor, b case c4, c5, c8, c9 10 pf, chip capacitors, b case c6 10 m f, 35 v tantalum surface mount capacitor c10 2.2 pf, chip capacitor, b case c11 4.7 pf, chip capacitor, b case c12 1.2 pf, chip capacitor, b case c17 220 m f, 50 v electrolytic capacitor l1, l2 12.5 nh, inductors z1 0.20 x 0.08 z2 0.57 x 0.12 b1 c1 rf input rf output v gg v dd c6 l1 z5 z4 z3 c2 z2 z1 z7 c8 c9 z8 z9 z10 c13 c14 b2 c15 c16 c17 c4 c5 z6 + + c7 + + c12 c10 c3 z11 z12 z13 dut c11 l2 figure 2. 945 mhz broadband test circuit components layout cut out area MRF9045M ground c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c12 c13 c14 c15 c16 l1 l2 a1 a2 b1 b2 wb1 wb2 ground v bias v supply c17
5 MRF9045M MRF9045Mr1 motorola rf device data typical characteristics 60 55 50 45 40 35 30 25 0.5 1 10 100 5 10 15 20 25 30 35 40 45 50 900 920 940 960 980 1000 35 25 15 5 0 10 20 30 40 50 60 0.5 1 10 100 g ps , power gain (db) figure 3. class ab test circuit performance figure 4. power gain, efficiency and irl versus output power figure 5. intermodulation distortion versus output power p out , output power (watts) pep p out , output power (watts) pep , drain efficiency (%) imd, intermodulationdistortion (dbc) irl, input return loss (db) i dq = 500 ma g ps imd3 irl v dd = 28 vdc p out = 45 watts (pep) i dq = 350 ma twotone measurement 100 khz tone spacing , f, frequency (mhz) 60 50 40 30 20 10 0 v dd = 28 vdc f = 945 mhz twotone measurement 100 khz tone spacing i dq = 350 ma i dq = 200 ma g ps , power gain (db) , drain efficiency (%) irl, input return loss (db) , imd, intermodulation distortion (dbc) 70 65 60 55 50 45 40 35 30 25 20 1 10 100 figure 6. intermodulation distortion products versus output power p out , output power (watts) pep imd, intermodulation distortion (dbc) 3rd order 5th order 7th order v dd = 28 vdc i dq = 350 ma f = 945 mhz twotone measurement, 100 khz tone spacing 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 22 24 26 28 30 32 5 10 15 20 0.5 1 10 100 0 10 20 30 40 50 60 p out , output power (watts cw) figure 7. cw power gain and drain efficiency versus output power v dd , drain voltage (volts) figure 8. output voltage versus supply voltage g ps , power gain (db) , drain efficiency (%) p out , output power (watts) pep p in = 0.3 w p in = 0.6 w p in = 1 w i dq = 350 ma f = 945 mhz twotone measurement 100 khz tone spacing v dd = 28 vdc i dq = 350 ma f = 945 mhz g ps v dd = 28 vdc i dq = 350 ma f = 945 mhz twotone measurement 100 khz tone spacing g ps irl
MRF9045M MRF9045Mr1 6 motorola rf device data figure 9. series equivalent input and output impedance f mhz z in w z ol * w 930 945 0.81 + j0.25 0.85 + j0.05 2.03 j0.09 2.03 j0.28 z in = complex conjugate of source impedance. z ol * = complex conjugate of the optimum load impedance at a given output power, voltage, imd, bias current and frequency. v dd = 28 v, i dq = 350 ma, p out = 45 w (pep) f = 945 mhz z o = 10 w z in z ol * note: z ol * was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. z in z ol * input matching network device under test output matching network f = 930 mhz f = 945 mhz f = 930 mhz
7 MRF9045M MRF9045Mr1 motorola rf device data package dimensions (to270) case 126506 issue e datum plane bottom view a1 2x e d1 e4 e1 d2 e3 a2 exposed heatsink area a b d h pin one id ???? ???? ???? ???? ???? ???? ???? ???? ???? d a m aaa d a m aaa d 2x b1 2x d3 notes: 1. controlling dimension: inch. 2. interpret dimensions and tolerances per asme y14.5m1994. 3. datum plane h is located at top of lead and is coincident with the lead where the lead exits the plastic body at the top of the parting line. 4. dimensions a d1o and a e1o do not include mold protrusion. allowable protrusion is .006 per side. dimensions a d1o and a e1o do include mold mismatch and are deter- mined at datum plane h. 5. dimension b1 does not include dambar protrusion. allowable dambar protrusion shall be .005 total in excess of the b1 dimension at maximum material condition. 6. datums a and b to be determined at datum plane h. 7. dimension a2 applies within zone a jo only. note 7 c1 f zone j e2 2x a dim a min max min max millimeters .076 .084 1.93 2.13 inches a1 .038 .044 0.96 1.12 a2 .040 .042 1.02 1.07 d .416 .424 10.57 10.77 d1 .376 .384 9.55 9.75 d2 .290 .320 7.37 8.13 d3 .016 .024 0.41 0.61 e .436 .444 11.07 11.28 e1 .236 .244 5.99 6.20 e2 .066 .074 1.68 1.88 e3 .150 .180 3.81 4.57 e4 .058 .066 1.47 1.68 f b1 .193 .199 4.90 5.06 c1 .007 .011 0.18 0.28 aaa .025 bsc .004 0.64 bsc 0.10 pin 1 pin 2 pin 3 style 1: pin 1. drain 2. gate 3. source
MRF9045M MRF9045Mr1 8 motorola rf device data motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, represe ntation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the applicati on or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo para meters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all ope rating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under it s patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical imp lant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product cou ld create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expens es, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized u se, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motoro la, inc. motorola, inc. is an equal opportunity/affirmative action employer. how to reach us: usa / europe / locations not listed : motorola literature distribution; p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 japan : motorola japan ltd.; sps, technical information center, 3201, minamiaz abu. minatoku, tokyo 1068573 japan. 8 1334403569 asia / pacific : motorola semiconductors h.k. ltd.; silicon harbour centre, 2 dai king street, tai po industrial estate, tai po, n.t., hong ko ng. 85226668334 technical information center: 18005216274 home page : http://www.motorola.com/semiconductors/ MRF9045M/d
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